ZVN2110GTA

Kuvat ovat vain viitteellisiä
Osa numero
ZVN2110GTA
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET N-Chnl 100V

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
250 S
Height
1.65 mm
Id - Continuous Drain Current
500 mA
Length
6.7 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-223-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
4 Ohms
Rise Time
4 ns
Series
ZVN2110
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
FET
Typical Turn-Off Delay Time
8 ns
Typical Turn-On Delay Time
4 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
800 mV
Width
3.7 mm

Uusimmat arvostelut

fast delivery

Fast shippng. Good quality. I recomend this seller.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Packed medium, in transit could поврелиться. But since it's safe, work perfectly

and whole all right. the features no more функционалу check.

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