FF100R12RT4

Kuvat ovat vain viitteellisiä
Osa numero
FF100R12RT4
Luokat
IGBT Modules
RoHS
Datalehdet
Kuvaus
IGBT Modules IGBT Module w/ IGBT & Diode

tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
2 V
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
555 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI
Unit Weight

Uusimmat arvostelut

Quick delivery. Secure packing. Excellent product. Thank you

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Shipping a little 1 weeks, normal packing, the procedure is complete.

Fast shippng. Good quality. I recomend this seller.

the photo in comparison with cheap. Delivery fast

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