- Osa numero
- IKB10N60T
- Luokat
- IGBT Transistors
- RoHS
- Datalehdet
- Kuvaus
- IGBT Transistors LOW LOSS DuoPack 600V 10A
IKB10N60T
Kuvat ovat vain viitteellisiä
tekniset tiedot
- Luokat
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 24 A
- Gate-Emitter Leakage Current
- 100 nA
- Height
- 4.57 mm
- Length
- 10.31 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 110 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP IGBT
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
- Width
- 9.45 mm
Porduct-luokka
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Uusimmat arvostelut
Hello! Order received, very happy. Thank you very much!
Flavia
Everything is excellent! recommend this seller!
Stoyan Chaykov
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Works. Recommend
Rajiv
Saatat pitää myös
Ihmiset katsovat IKB10N60T sitten ostivat
IKB10N60T Uutiset
03/14/2023
03/13/2023
03/13/2023
Aiheeseen liittyvät avainsanat IKB1
- IKB10N60T Integroitu
- IKB10N60T RoHS
- IKB10N60T PDF-tietosivu
- IKB10N60T Datalehdet
- IKB10N60T Osa
- IKB10N60T Ostaa
- IKB10N60T Jakelija
- IKB10N60T PDF
- IKB10N60T Component
- IKB10N60T ICS
- IKB10N60T Lataa PDF
- IKB10N60T Lataa tiedot
- IKB10N60T Toimittaa
- IKB10N60T toimittaja
- IKB10N60T Hinta
- IKB10N60T Tietolomake
- IKB10N60T Kuva
- IKB10N60T Kuva
- IKB10N60T inventaario
- IKB10N60T kalusto
- IKB10N60T Alkuperäinen
- IKB10N60T halvin
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- IKB10N60T Lyijytön
- IKB10N60T määrittely
- IKB10N60T Kuumat tarjoukset
- IKB10N60T Break Hinta
- IKB10N60T Tekniset tiedot
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