Osa numero IGO60R070D1AUMA1 Luokat MOSFET RoHS Datalehdet IGO60R070D1AUMA1 Kuvaus MOSFET 600V CoolGaN Power Transistor
Luokat MOSFET Channel Mode Enhancement Configuration Single Fall Time 10 ns Id - Continuous Drain Current 31 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Moisture Sensitive Yes Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case PG-DSO-20 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 125 W Product Type MOSFET Qg - Gate Charge 5.8 nC Rds On - Drain-Source Resistance 70 mOhms Rise Time 7 ns Technology GaN Tradename CoolGaN Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 11 ns Typical Turn-On Delay Time 13 ns Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 0.9 V