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TK20J60W,S1VE

TK20J60W,S1VE
Kuvat ovat vain viitteellisiä
Osa numero
TK20J60W,S1VE
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET TO-3PN PD=165W 1MHz PWR MOSFET TRNS
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tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Id - Continuous Drain Current
20 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PN-3
Packaging
Tube
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
48 nC
Rds On - Drain-Source Resistance
155 mOhms
Rise Time
25 ns
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Teşekkürler
Received, Fast shipping, not checked yet
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Hello! Order received, very happy. Thank you very much!
High Quality driver, works excellent. It came to Moscow for 7 days.
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Aiheeseen liittyvät avainsanat TK20

  • TK20J60W,S1VE Integroitu
  • TK20J60W,S1VE RoHS
  • TK20J60W,S1VE PDF-tietosivu
  • TK20J60W,S1VE Datalehdet
  • TK20J60W,S1VE Osa
  • TK20J60W,S1VE Ostaa
  • TK20J60W,S1VE Jakelija
  • TK20J60W,S1VE PDF
  • TK20J60W,S1VE Component
  • TK20J60W,S1VE ICS
  • TK20J60W,S1VE Lataa PDF
  • TK20J60W,S1VE Lataa tiedot
  • TK20J60W,S1VE Toimittaa
  • TK20J60W,S1VE toimittaja
  • TK20J60W,S1VE Hinta
  • TK20J60W,S1VE Tietolomake
  • TK20J60W,S1VE Kuva
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  • TK20J60W,S1VE inventaario
  • TK20J60W,S1VE kalusto
  • TK20J60W,S1VE Alkuperäinen
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  • TK20J60W,S1VE määrittely
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  • TK20J60W,S1VE Break Hinta
  • TK20J60W,S1VE Tekniset tiedot

Suositut haut

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