- Osa numero
- IGP06N60T
- Luokat
- IGBT Transistors
- RoHS
- Datalehdet
- Kuvaus
- IGBT Transistors LOW LOSS DuoPack 600V 6A
IGP06N60T
Kuvat ovat vain viitteellisiä
tekniset tiedot
- Luokat
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 12 A
- Gate-Emitter Leakage Current
- 100 nA
- Height
- 9.25 mm
- Length
- 10 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 88 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP IGBT
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
- Width
- 4.4 mm
Porduct-luokka
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Uusimmat arvostelut
thanks for resending, this item is good !
PLEMMENOS VAGELIS
goods very well received very good quality
Fabrice Cubaynes
Takes 8 days to Japan. Good!
Alex Fragkos
packed pretty good, all is ok,-seller.
Julianah Yungkim
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Saatat pitää myös
Ihmiset katsovat IGP06N60T sitten ostivat
IGP06N60T Uutiset
03/14/2023
03/13/2023
03/13/2023
Aiheeseen liittyvät avainsanat IGP0
- IGP06N60T Integroitu
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- IGP06N60T PDF-tietosivu
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- IGP06N60T PDF
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- IGP06N60T Lataa PDF
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- IGP06N60T Break Hinta
- IGP06N60T Tekniset tiedot
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