SQ3987EV-T1_GE3

Kuvat ovat vain viitteellisiä
Osa numero
SQ3987EV-T1_GE3
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET Dual P-Ch -30V AEC-Q101 Qualified

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
2.2 ns, 2.2 ns
Forward Transconductance - Min
4.2 S, 4.2 S
Id - Continuous Drain Current
3 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSOP-6
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
1.67 W
Product Type
MOSFET
Qg - Gate Charge
12.2 nC, 12.2 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
85 mOhms, 85 mOhms
Rise Time
2.4 ns, 2.4 ns
Series
SQ3987EV
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
18.4 ns, 18.4 ns
Typical Turn-On Delay Time
6.6 ns, 6.6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Uusimmat arvostelut

Teşekkürler

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Decent quality, not минвелл certainly, but enough decent

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Aiheeseen liittyvät avainsanat SQ39

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  • SQ3987EV-T1_GE3 PDF-tietosivu
  • SQ3987EV-T1_GE3 Datalehdet
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  • SQ3987EV-T1_GE3 PDF
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