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IGLD60R070D1AUMA1

IGLD60R070D1AUMA1
Kuvat ovat vain viitteellisiä
Osa numero
IGLD60R070D1AUMA1
Luokat
MOSFET
RoHS
Datalehdet
Kuvaus
MOSFET 600V CoolGaN Power Transistor
Hanki hinta nyt! PCB-lainaus Hanki hinta nyt!

tekniset tiedot

Luokat
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13 ns
Id - Continuous Drain Current
15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PG-LSON-8
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
114 W
Product Type
MOSFET
Qg - Gate Charge
5.8 nC
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
9 ns
Technology
GaN
Tradename
CoolGaN
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
15 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
0.9 V

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
packed pretty good, all is ok,-seller.
Works. Find the price of this product is very good
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
The timer is running. 10 PCS. Packed properly.
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