IGB20N60H3

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tekniset tiedot

Luokat
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
170 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Uusimmat arvostelut

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

My package arrived wet, not know where occurs this fact, but working all right

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Quickly came to CET, all in one package. Look at the rules

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

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