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2N1131A

2N1131A
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
40 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current
150 mA
DC Collector/Base Gain hfe Min
20 at 150 mA, 10 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
90 MHz
Mounting Style
Through Hole
Package / Case
TO-39-3
Packaging
Bulk
Part # Aliases
Product Type
BJTs - Bipolar Transistors
Series
2N657
Technology
SI
Transistor Polarity
PNP

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Yes, they are all here. :)
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Fast shippng. Good quality. I recomend this seller.
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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