MG06100S-BN4MM

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tekniset tiedot

Luokat
IGBT Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.45 V
Configuration
Dual
Continuous Collector Current at 25 C
125 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
Package S
Packaging
Bulk
Pd - Power Dissipation
330 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Series
MG06100S
Technology
SI
Unit Weight

Uusimmat arvostelut

fast delivery, item as described, thanks!!

Quickly came to CET, all in one package. Look at the rules

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Perfectly.

High Quality driver, works excellent. It came to Moscow for 7 days.

Aiheeseen liittyvät avainsanat MG06

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