2N2905A

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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
60 V
Configuration
Single
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
200 MHz
Height
6.6 mm
Length
9.4 mm
Maximum DC Collector Current
0.6 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-39-3
Pd - Power Dissipation
600 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
PNP
Width
9.4 mm

Uusimmat arvostelut

Takes 8 days to Japan. Good!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

The goods are OK, thank you dealers.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

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