IGP10N60T

Kuvat ovat vain viitteellisiä

tekniset tiedot

Luokat
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
24 A
Gate-Emitter Leakage Current
100 nA
Height
9.25 mm
Length
10 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
110 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight
Width
4.4 mm

Uusimmat arvostelut

Very good!

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Quickly came to CET, all in one package. Look at the rules

packed pretty good, all is ok,-seller.

Goods came in two weeks. Well packed. Track number tracked

Aiheeseen liittyvät avainsanat IGP1

  • IGP10N60T Integroitu
  • IGP10N60T RoHS
  • IGP10N60T PDF-tietosivu
  • IGP10N60T Datalehdet
  • IGP10N60T Osa
  • IGP10N60T Ostaa
  • IGP10N60T Jakelija
  • IGP10N60T PDF
  • IGP10N60T Component
  • IGP10N60T ICS
  • IGP10N60T Lataa PDF
  • IGP10N60T Lataa tiedot
  • IGP10N60T Toimittaa
  • IGP10N60T toimittaja
  • IGP10N60T Hinta
  • IGP10N60T Tietolomake
  • IGP10N60T Kuva
  • IGP10N60T Kuva
  • IGP10N60T inventaario
  • IGP10N60T kalusto
  • IGP10N60T Alkuperäinen
  • IGP10N60T halvin
  • IGP10N60T Erinomainen
  • IGP10N60T Lyijytön
  • IGP10N60T määrittely
  • IGP10N60T Kuumat tarjoukset
  • IGP10N60T Break Hinta
  • IGP10N60T Tekniset tiedot