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2N2369A/TR

2N2369A/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
40 V
Collector- Emitter Voltage VCEO Max
15 V
Collector-Emitter Saturation Voltage
0.2 V
Configuration
Single
DC Collector/Base Gain hfe Min
20 at 100 mA, 1 V
DC Current Gain hFE Max
120 at 100 mA, 1 V
Emitter- Base Voltage VEBO
4.5 V
Maximum DC Collector Current
0.1 A
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-206AA-3
Packaging
Reel
Pd - Power Dissipation
0.36 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
Quick delivery. Secure packing. Excellent product. Thank you
Quickly came to CET, all in one package. Look at the rules
Works. Find the price of this product is very good
Fast shippng. Good quality. I recomend this seller.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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