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2N2906A/TR

2N2906A/TR
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
Single
Continuous Collector Current
600 mA
DC Collector/Base Gain hfe Min
40
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
-
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-18-3
Packaging
Reel
Pd - Power Dissipation
0.5 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
PNP

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
everything as it is written in the description of the same deductible prodovtsu deserved
fast delivery, item as described, thanks!!
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Takes 8 days to Japan. Good!
High Quality driver, works excellent. It came to Moscow for 7 days.
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2N2906A/TR Uutiset

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Suositut haut

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