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2N2896

2N2896
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tekniset tiedot

Luokat
Bipolar Transistors - BJT
Collector- Emitter Voltage VCEO Max
90 V
Collector-Emitter Saturation Voltage
0.6 V
Configuration
Single
DC Collector/Base Gain hfe Min
60
DC Current Gain hFE Max
200
Gain Bandwidth Product fT
120 MHz
Maximum DC Collector Current
1 A
Mounting Style
Through Hole
Package / Case
TO-18
Packaging
Bulk
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

Porduct-luokka

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Uusimmat arvostelut

Kirjoita oma Reivew
thanks for resending, this item is good !
Teşekkürler
High Quality driver, works excellent. It came to Moscow for 7 days.
fast delivery
Long Service and Russia!
Lisää

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