Osa numero 2N2905Ae3 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2905Ae3 Kuvaus Bipolar Transistors - BJT BJTs
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 1.6 V Configuration Single Continuous Collector Current 600 mA DC Collector/Base Gain hfe Min 75 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT - Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-39-3 Pd - Power Dissipation 0.8 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity PNP