Osa numero 2N1613 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N1613 Kuvaus Bipolar Transistors - BJT NPN Gen Pur SS
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 75 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current 500 mA DC Collector/Base Gain hfe Min 40 DC Current Gain hFE Max 120 Emitter- Base Voltage VEBO 7 V Gain Bandwidth Product fT 60 MHz Height 6.6 mm Length 9.4 mm Maximum DC Collector Current 0.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 3 W Product Type BJTs - Bipolar Transistors Series 2N1613 Technology SI Transistor Polarity NPN Unit Weight Width 9.4 mm