Osa numero 2N2857 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2857 Kuvaus Bipolar Transistors - BJT NPN VHF/UHF AM
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 30 V Collector- Emitter Voltage VCEO Max 15 V Collector-Emitter Saturation Voltage - Configuration Single Continuous Collector Current 40 mA DC Collector/Base Gain hfe Min 30 DC Current Gain hFE Max 150 Emitter- Base Voltage VEBO 2.5 V Gain Bandwidth Product fT 1.9 GHz Height 5.33 mm Length 5.84 mm Maximum DC Collector Current 40 mA Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-72-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 200 mW Product Type BJTs - Bipolar Transistors Series 2N2857 Technology SI Transistor Polarity NPN Unit Weight Width 5.84 mm