Osa numero 2N2906 Luokat Bipolar Transistors - BJT RoHS Datalehdet 2N2906 Kuvaus Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W
Luokat Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 40 V Collector-Emitter Saturation Voltage 1.6 V Configuration Single Continuous Collector Current 600 mA DC Collector/Base Gain hfe Min - Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 200 MHz Maximum DC Collector Current 600 mA Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-18 Packaging Bulk Part # Aliases Pd - Power Dissipation 400 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity PNP Unit Weight