HMC1099PM5E 10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier
07/29/2022
Product Details
The HMC1099PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 69% PAE across an instantaneous bandwidth of 0.01 GHz to 1.1 GHz, and with a ±0.5 dB typical gain flatness.
The HMC1099PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.
The HMC1099PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.
Multifunction pin names may be referenced by their relevant function only.
Applications
- Extended battery operation for public mobile radios
- Power amplifier stage for wireless infrastructures
- Test and measurement equipment
- Commercial and military radars
- General-purpose transmitter amplification
Features and Benefits
- High small signal gain: 20 dB typical
- POUT: 41.5 dBm typical at PIN = 27 dBm
- High PAE: 60% typical at PIN = 27 dBm
- Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all frequencies
- Supply voltage: VDD = 28 V at a quiescent current of 100 mA
- Internal prematching
- Simple and compact external tuning for optimal performance
- 5 mm × 5 mm, 32-lead LFCSP