AD8352 2 GHz Ultralow Distortion Differential RF/IF Amplifier

Product Details

The AD8352 is a high performance differential amplifier optimized for RF and IF applications. It achieves better than 80 dB SFDR performance at frequencies up to 200 MHz, and 65 dB beyond 500 MHz, making it an ideal driver for high speed 12-bit to 16-bit analog-to-digital converters (ADCs).

Unlike other wideband differential amplifiers, the AD8352 has buffers that isolate the gain setting resistor(RG) from the signal inputs. As a result, the AD8352 maintains a constant 3 kΩ input resistance for gains of 3 dB to 25 dB, easing matching and input drive requirements. The AD8352 has a nominal 100 Ω differential output resistance.

The device is optimized for wideband, low distortion performance at frequencies beyond 500 MHz. These attributes, together with its wide gain adjust capability, make this device the amplifier of choice for general-purpose IF and broadband applications where low distortion, noise, and power are critical. It is ideally suited for driving not only ADCs but also mixers, pin diode attenuators, surface acoustic wave (SAW) filters, and multielement discrete devices. The device is available in a compact 3 mm × 3 mm, 16-lead LFCSP and operates over a temperature range of −40°C to +85°C.


  • Differential ADC drivers
  • Single-ended-to-differential conversion
  • RF/IF gain blocks
  • SAW filter interfacing

Features and Benefits

  • −3 dB bandwidth of 2.2 GHz (AV = +10 dB)
  • Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB
  • Single resistor and capacitor distortion adjust
  • Input resistance: 3 kΩ, independent of gain (AV)
  • Differential or single-ended input to differential output
  • Low noise input stage: 2.7 nV/√Hz RTI at AV = 10 dB
  • Low broadband distortion
    • 10 MHz: −86 dBc HD2, −82 dBc HD3
    • 70 MHz: −84 dBc HD2, −82 dBc HD3
    • 190 MHz: −81 dBc HD2, −87 dBc HD3
  • OIP3 of 41 dBm at 150 MHz
  • Slew rate: 8 V/ns
  • Fast settling and overdrive recovery of <2 ns
  • Single-supply operation: 3 V to 5.5 V
  • Low power dissipation: 37 mA typical at 5 V
  • Power-down capability: 5 mA at 5 V
  • Fabricated using the high speed XFCB3 SiGe process