Tervetuloa PCB Electronics Supply Chain +852-562-00800

ADRF5549 Receiver Front End, Dual-Channel, 1.8 GHz to 2.8 GHz

07/26/2022

Product Details

The ADRF5549 is a dual-channel, integrated, RF front-end multichip module designed for time division duplexing (TDD) applications that operates from 1.8 GHz to 2.8 GHz. The ADRF5549 is configured in dual channels with a cascading, two-stage, low noise amplifier (LNA) and a high power, silicon single-pole, double-throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure of 1.4 dB and a high gain of 35 dB with an output third-order intercept point (OIP3) of 32 dBm typical.

In low gain mode, one stage of the two-stage LNA is in bypass mode providing 17 dB of gain at a lower current of 35 mA. In power-down mode, the LNAs are turned off, and the device draws 12 mA.

In transmit operation, when RF inputs are connected to a termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.6 dB and handles a long-term evolution (LTE) full lifetime average (9 dB peak to average ratio (PAR)) of 40 dBm and 43 dBm for a 9 dB PAR LTE single event (<10 sec) average. The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead, lead frame chip-scale package (LFCSP).

Applications

  • Wireless Infrastructure
  • TDD massive multiple input and multiple output (MIMO) and active antenna systems
  • TDD-based communication systems

Features and Benefits

  • Integrated dual-channel RF front end
    • 2-stage LNA and high power SPDT switch
    • On-chip bias and matching
    • Single-supply operation
  • Gain
    • High gain mode: 35 dB typical at 2.3 GHz
    • Low gain mode: 17 dB typical at 2.3 GHz
  • Low noise figure
    • High gain mode: 1.4 dB typical at 2.3 GHz
    • Low gain mode: 1.4 dB typical at 2.3 GHz
  • High isolation
    • Between RxOUT-ChA and RxOUT-ChB: 50 dB typical
    • Between TERM-ChA and TERM-ChB: 62 dB typical
  • Low insertion loss: 0.6 dB typical at 2.3 GHz
  • High power handling at TCASE = 105°C
    • Full lifetime
      • LTE average power (9 dB PAR): 40 dBm
    • Single event (<10 sec operation)
      • LTE average power (9 dB PAR): 43 dBm
  • High OIP3: 32 dBm typical
  • Power-down mode and low gain mode for LNA
  • Low supply current
    • High gain mode: 85 mA typical at 5V
    • Low gain mode: 35 mA typical at 5 V
    • Power-down mode: 12 mA typical at 5 V
  • Positive logic control
  • 6 mm × 6 mm, 40-lead LFCSP